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. 2000 Jul 1;116(1):13–32. doi: 10.1085/jgp.116.1.13

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© 2000 The Rockefeller University Press

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Voltage-dependent gating of a Cx32*Cx43E1 conductive hemichannel. (A) A cell-attached recording of a single Cx32*Cx43E1 conductive hemichannel at −80 mV. In addition to the rapid flickers (Fig. 3), the channel resides at longer-lived subconductance levels, with durations that range from tens of milliseconds (shown on expanded trace) to tens of seconds. (B) An event list histogram of closures with duration longer than 50 ms at −80 mV. The histogram is best fit by a double exponential with time constants, τ₁ = 56.8 ms and τ₂ = 593 ms. (Inset) The portion of the histogram from 0 to 2 s is shown.