. 1997 Oct 1;110(4):391–401. doi: 10.1085/jgp.110.4.391

Table I.

Parameters of the Voltage Dependence of Activation

Channel	v_1/2 ^*	z_m(e₀)^*	n ^*
	mV
IFMQ3	−29.1 ± 2.7	5.1 ± 1.1	10
1R2Q	−30.1 ± 1.6	5.5 ± 0.6	4
1R2K	−26.3 ± 1.7	4.6 ± 0.5	3
1K4Q	−10.6 ± 3.5^‡	3.9 ± 0.6^‡	7
1K4R	−25.3 ± 2.5^‡	5.1 ± 0.3	7
2R2Q	−24.7 ± 1.5^‡	4.0 ± 0.8^‡	7
2R2K	−20.0 ± 1.8^‡	4.2 ± 0.5	4
2K4Q	−14.2 ± 3.1^‡	4.4 ± 0.9	5
2K4R	−25.3 ± 1.0^‡	4.9 ± 1.3	5
3R2Q	−29.4 ± 1.9	5.5 ± 0.4	5
3R2K	−29.5 ± 5.2	5.5 ± 0.5^‡	4
3R4Q	−47.2 ± 6.4^‡	5.4 ± 1.6	5
3R4K	−19.3 ± 3.3^‡	4.5 ± 0.9	8
4R2Q	−25.5 ± 1.7^‡	4.6 ± 0.4	5
4R2K	−25.0 ± 1.7^‡	5.1 ± 0.4	3
4R4Q	−28.7 ± 1.6	6.0 ± 0.8	7
4R4K	−21.7 ± 1.5^‡	5.7 ± 0.3	5
1K4Q:2K4Q	−12.2 ± 1.4^‡	2.6 ± 0.2^‡	7
3R4Q:4R4Q	−39.4 ± 1.7^‡	4.5 ± 0.9	6

v_1/2 and z_m are the half-maximal voltage and gating valence of activation as determined by least-squares fits of the data (n = number of separate determinations) to a two-state Boltzmann function as described in materials and methods.

^‡

Values significantly different from IFMQ3, with a probability <0.05 resulting from random variation (based on Student's unpaired t test).